If you are in search of part numbers like 1N3017B, 1N3830, 925059-2, 925421-1B, DZ700910C, and others that fall under the NSN 5961-00-499-7247, we have you covered with the catalog and procurement resources provided on this page. At the top of the page, you will be able to review a number of details and data that pertain to this particular NSN, while available offerings are listed out below. If any items on our NSN 5961-00-499-7247 catalog interest you, be sure to request a quote from our staff at your earliest convenience. You can do this by submitting a Request for Quote (RFQ) form through our website or by getting in touch with our team via phone or email.
As an ASAP Semiconductor platform operating with quality as a focus, all NSN 5961-00-499-7247 parts we stock come from trusted manufacturers and undergo any necessary inspections or testing prior to shipment. Additionally, every purchase you make will come delivered with all applicable qualifying certifications or manufacturing trace documentation. Aside from such commitments, we also strive to provide customers procurement solutions that equally balance competitive pricing and timely fulfillment. With so much to offer, choose ASAP MilSTD for NSN 5961-00-499-7247 supplies and more.
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-499-7247 (004997247) |
| NCB Code | USA (00) |
| Manufacturer | C O D I Corp, Hug Electronics Corp, Gilbert Engineering Co Inc, R F Products Inc, Infineon Technologies, Microsemi Corporation, Electronic Industries Inc, Raytheon Company, Military Specifications, Freescale Semiconductor Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N3017B | c o d i corp | semiconductor device diode | 16352 | RFQ |
| 1N3017B | hug electronics corp | semiconductor device diode | 07595 | RFQ |
| 1N3017B | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| 1N3017B | r f products inc | semiconductor device diode | 58022 | RFQ |
| 1N3017B | infineon technologies | semiconductor device diode | 81483 | RFQ |
| 1N3017B | microsemi corporation | semiconductor device diode | 12954 | RFQ |
| 1N3830 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 925059-2 | raytheon company | semiconductor device diode | 82577 | RFQ |
| 925421-1B | raytheon company | semiconductor device diode | 82577 | RFQ |
| DZ700910C | microsemi corporation | semiconductor device diode | 12954 | RFQ |
| DZ750207C | microsemi corporation | semiconductor device diode | 12954 | RFQ |
| JANTX1N3017B | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N3017B-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| RELEASE 3852 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| SZ51252H-2 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| SZM20016H1 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 125.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Relevant Components for NSN - 5961-00-499-7247, 5961004997247 | ||||
| 5930-01-558-3633 (5930015583633) | 5998-01-464-6151 (5998014646151) | 5935-01-506-9572 (5935015069572) | 5910-01-007-5962 (5910010075962) | |
| 5962-01-085-4176 (5962010854176) | 5905-01-416-9093 (5905014169093) | 5935-01-682-9240 (5935016829240) | 5950-00-193-8677 (5950001938677) | |
| 5950-01-127-8658 (5950011278658) | 5930-01-201-1993 (5930012011993) | 5998-00-153-4334 (5998001534334) | 5910-00-816-3875 (5910008163875) | |
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