If you are in search of part numbers like 10133204, 1196030P8, 353-8503-310, 4037937-511, 5961PL0190494, and others that fall under the NSN 5961-01-102-2873, we have you covered with the catalog and procurement resources provided on this page. At the top of the page, you will be able to review a number of details and data that pertain to this particular NSN, while available offerings are listed out below. If any items on our NSN 5961-01-102-2873 catalog interest you, be sure to request a quote from our staff at your earliest convenience. You can do this by submitting a Request for Quote (RFQ) form through our website or by getting in touch with our team via phone or email.
As an ASAP Semiconductor platform operating with quality as a focus, all NSN 5961-01-102-2873 parts we stock come from trusted manufacturers and undergo any necessary inspections or testing prior to shipment. Additionally, every purchase you make will come delivered with all applicable qualifying certifications or manufacturing trace documentation. Aside from such commitments, we also strive to provide customers procurement solutions that equally balance competitive pricing and timely fulfillment. With so much to offer, choose ASAP MilSTD for NSN 5961-01-102-2873 supplies and more.
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-102-2873 (011022873) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Bae Systems Inc, Rockwell Collins Aerospace, Honeywell International Inc, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, Interstate Electronics Corporation, Lockheed Martin Corporation, Northrop Grumman Systems Corporation, Leonardo Mw Ltd, Military Specifications, Joint Army-Navy Specifications, Trw Electronic Components |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10133204 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 1196030P8 | bae systems inc | semiconductor device diode | 94117 | RFQ |
| 353-8503-310 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 4037937-511 | honeywell international inc | semiconductor device diode | 07187 | RFQ |
| 5961PL0190494 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 5E4820 51 1014 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
| 7443300 FIND NO 029 | interstate electronics corporation | semiconductor device diode | 07421 | RFQ |
| 7908415-30 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 947299-7566 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| 995-9502-027 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| CS-705002-16 | leonardo mw ltd | semiconductor device diode | u2248 | RFQ |
| JANTX1N756A | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N756A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N756A1 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| JANTX1N9658 | military specifications | semiconductor device diode | 81349 | RFQ |
| LVA82A | trw electronic components | semiconductor device diode | 01281 | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-102-2873, 5961011022873 | ||||
| 5998-01-194-3347 (5998011943347) | 5905-01-109-6463 (5905011096463) | 5962-01-247-5203 (5962012475203) | 5998-01-470-0899 (5998014700899) | |
| 5935-01-231-4518 (5935012314518) | 5975-00-980-0652 (5975009800652) | 5955-01-499-7866 (5955014997866) | 5905-00-417-7747 (5905004177747) | |
| 5995-01-411-1285 (5995014111285) | 5998-01-175-6144 (5998011756144) | 5940-00-894-0095 (5940008940095) | 5935-01-697-5582 (5935016975582) | |
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