If you are in search of part numbers like 1-4M2-4AZ, 10133275, 1900-3002, 1902-3002, 353-8503-180, and others that fall under the NSN 5961-01-126-3009, we have you covered with the catalog and procurement resources provided on this page. At the top of the page, you will be able to review a number of details and data that pertain to this particular NSN, while available offerings are listed out below. If any items on our NSN 5961-01-126-3009 catalog interest you, be sure to request a quote from our staff at your earliest convenience. You can do this by submitting a Request for Quote (RFQ) form through our website or by getting in touch with our team via phone or email.
As an ASAP Semiconductor platform operating with quality as a focus, all NSN 5961-01-126-3009 parts we stock come from trusted manufacturers and undergo any necessary inspections or testing prior to shipment. Additionally, every purchase you make will come delivered with all applicable qualifying certifications or manufacturing trace documentation. Aside from such commitments, we also strive to provide customers procurement solutions that equally balance competitive pricing and timely fulfillment. With so much to offer, choose ASAP MilSTD for NSN 5961-01-126-3009 supplies and more.
Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-126-3009 (011263009) |
NCB Code | USA (01) |
Manufacturer | Freescale Semiconductor Inc, Nimikkeistokeskus Ncb Finland, Avago Technologies Us Inc, Hewlett-Packard Company, Rockwell Collins Aerospace, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, Lockheed Martin Corporation, Delco Electronics Corp, Telcom Semiconductor Inc, Microsemi Corporation, Military Specifications |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1-4M2-4AZ | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
10133275 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
1900-3002 | avago technologies us inc | semiconductor device diode | 50434 | RFQ |
1900-3002 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
1902-3002 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
353-8503-180 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
418715-66 | raytheon company | semiconductor device diode | 96214 | RFQ |
5961PL1262236 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
5E4820 51 1001 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
77C953324P79 | lockheed martin corporation | semiconductor device diode | 03538 | RFQ |
7890071-201 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
CD35526 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
CD35526 | microsemi corporation | semiconductor device diode | 14552 | RFQ |
JAN1N4370A | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N4370A | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
JANTX1N4370A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
ST7890071-201 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.4 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 155.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-01-126-3009, 5961011263009 | ||||
5990-00-136-7127 (5990001367127) | 5915-01-096-0048 (5915010960048) | 5950-00-328-3908 (5950003283908) | 5905-01-175-0179 (5905011750179) | |
5961-01-383-1969 (5961013831969) | 5970-00-143-5833 (5970001435833) | 5910-01-036-6631 (5910010366631) | 5998-01-039-1020 (5998010391020) | |
5940-01-088-3246 (5940010883246) | 5975-01-484-0957 (5975014840957) | 5935-01-104-8326 (5935011048326) | 5905-01-066-7106 (5905010667106) | |
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