If you are in search of part numbers like 13-1330467-3, NH13-1330467-3, and others that fall under the NSN 5961-01-228-5601, we have you covered with the catalog and procurement resources provided on this page. At the top of the page, you will be able to review a number of details and data that pertain to this particular NSN, while available offerings are listed out below. If any items on our NSN 5961-01-228-5601 catalog interest you, be sure to request a quote from our staff at your earliest convenience. You can do this by submitting a Request for Quote (RFQ) form through our website or by getting in touch with our team via phone or email.
As an ASAP Semiconductor platform operating with quality as a focus, all NSN 5961-01-228-5601 parts we stock come from trusted manufacturers and undergo any necessary inspections or testing prior to shipment. Additionally, every purchase you make will come delivered with all applicable qualifying certifications or manufacturing trace documentation. Aside from such commitments, we also strive to provide customers procurement solutions that equally balance competitive pricing and timely fulfillment. With so much to offer, choose ASAP MilSTD for NSN 5961-01-228-5601 supplies and more.
Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-228-5601 (012285601) |
NCB Code | USA (01) |
Manufacturer | Freescale Semiconductor Inc, General Dynamics Mission Systems, Gte Government Systems Corp, Microsemi Corporation, American Power Devices Inc, C O D I Corp, Dla Land And Maritime |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
13-1330467-3 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
13-1330467-3 | general dynamics mission systems | semiconductor device diode | 04655 | RFQ |
13-1330467-3 | gte government systems corp | semiconductor device diode | 11293 | RFQ |
13-1330467-3 | microsemi corporation | semiconductor device diode | 43611 | RFQ |
13-1330467-3 | american power devices inc | semiconductor device diode | 50273 | RFQ |
13-1330467-3 | c o d i corp | semiconductor device diode | 16352 | RFQ |
NH13-1330467-3 | dla land and maritime | semiconductor device diode | 16236 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.3 MAXIMUM REGULATOR VOLTAGE,DC |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PN |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-01-228-5601, 5961012285601 | ||||
5930-01-558-3633 (5930015583633) | 5998-01-464-6151 (5998014646151) | 5935-01-506-9572 (5935015069572) | 5910-01-007-5962 (5910010075962) | |
5962-01-085-4176 (5962010854176) | 5905-01-416-9093 (5905014169093) | 5935-01-682-9240 (5935016829240) | 5950-00-193-8677 (5950001938677) | |
5950-01-127-8658 (5950011278658) | 5930-01-201-1993 (5930012011993) | 5998-00-153-4334 (5998001534334) | 5910-00-816-3875 (5910008163875) | |
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