If you are in search of part numbers like 1049709-1, 156-1360-01, 1800-0318, 2388917-1, 521090-422, and others that fall under the NSN 5962-01-162-7584, we have you covered with the catalog and procurement resources provided on this page. At the top of the page, you will be able to review a number of details and data that pertain to this particular NSN, while available offerings are listed out below. If any items on our NSN 5962-01-162-7584 catalog interest you, be sure to request a quote from our staff at your earliest convenience. You can do this by submitting a Request for Quote (RFQ) form through our website or by getting in touch with our team via phone or email.
As an ASAP Semiconductor platform operating with quality as a focus, all NSN 5962-01-162-7584 parts we stock come from trusted manufacturers and undergo any necessary inspections or testing prior to shipment. Additionally, every purchase you make will come delivered with all applicable qualifying certifications or manufacturing trace documentation. Aside from such commitments, we also strive to provide customers procurement solutions that equally balance competitive pricing and timely fulfillment. With so much to offer, choose ASAP MilSTD for NSN 5962-01-162-7584 supplies and more.
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-162-7584 (011627584) |
| NCB Code | USA (01) |
| Manufacturer | Raytheon Company, Tektronix Gmbh, Biomation Corp, Lockheed Martin Corporation, Advanced Electronics Design Inc, Military Specifications, Inspektorat Wsparcia Sil Zbrojnych, Freescale Semiconductor Inc, Fairchild Semiconductor Corp, Advanced Micro Devices Inc, Cypress Semiconductor Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1049709-1 | raytheon company | microcircuit memory | 49956 | RFQ |
| 156-1360-01 | tektronix gmbh | microcircuit memory | 80009 | RFQ |
| 1800-0318 | biomation corp | microcircuit memory | 57062 | RFQ |
| 2388917-1 | lockheed martin corporation | microcircuit memory | 49671 | RFQ |
| 521090-422 | advanced electronics design inc | microcircuit memory | 55714 | RFQ |
| 5962-3823110BWA | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3823110BWB | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3823110BWX | military specifications | microcircuit memory | 81349 | RFQ |
| 5962PL0930375 | inspektorat wsparcia sil zbrojnych | microcircuit memory | 9009h | RFQ |
| 725004-371 | raytheon company | microcircuit memory | 05869 | RFQ |
| 93422 BWAJC | freescale semiconductor inc | microcircuit memory | 04713 | RFQ |
| 93422DMQB | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| AM93422 DMC | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| CY93422PCB | cypress semiconductor inc | microcircuit memory | 65786 | RFQ |
| F93422DMQB | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| F93422PC | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| JAN-M38510/23110BWX | military specifications | microcircuit memory | 81349 | RFQ |
| M38510/23110BWA | military specifications | microcircuit memory | 81349 | RFQ |
| M38510/23110BWB | military specifications | microcircuit memory | 81349 | RFQ |
| M38510/23110BWX | military specifications | microcircuit memory | 81349 | RFQ |
| MIL-M-38510/231 | military specifications | microcircuit memory | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.260 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.350 INCHES MINIMUM AND 0.390 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 935.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 165.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-7 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-162-7584, 5962011627584 | ||||
| 5998-01-194-3347 (5998011943347) | 5905-01-109-6463 (5905011096463) | 5962-01-247-5203 (5962012475203) | 5998-01-470-0899 (5998014700899) | |
| 5935-01-231-4518 (5935012314518) | 5975-00-980-0652 (5975009800652) | 5955-01-499-7866 (5955014997866) | 5905-00-417-7747 (5905004177747) | |
| 5995-01-411-1285 (5995014111285) | 5998-01-175-6144 (5998011756144) | 5940-00-894-0095 (5940008940095) | 5935-01-697-5582 (5935016975582) | |
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