If you are in search of part numbers like 14H4, 48-066386-02, 5962-3850303BRA, 5962-3850303BRB, 5962-3850303BRX, and others that fall under the NSN 5962-01-184-1162, we have you covered with the catalog and procurement resources provided on this page. At the top of the page, you will be able to review a number of details and data that pertain to this particular NSN, while available offerings are listed out below. If any items on our NSN 5962-01-184-1162 catalog interest you, be sure to request a quote from our staff at your earliest convenience. You can do this by submitting a Request for Quote (RFQ) form through our website or by getting in touch with our team via phone or email.
As an ASAP Semiconductor platform operating with quality as a focus, all NSN 5962-01-184-1162 parts we stock come from trusted manufacturers and undergo any necessary inspections or testing prior to shipment. Additionally, every purchase you make will come delivered with all applicable qualifying certifications or manufacturing trace documentation. Aside from such commitments, we also strive to provide customers procurement solutions that equally balance competitive pricing and timely fulfillment. With so much to offer, choose ASAP MilSTD for NSN 5962-01-184-1162 supplies and more.
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-184-1162 (011841162) |
| NCB Code | USA (01) |
| Manufacturer | Mmi Amd, Northrop Grumman Systems Corporation, Military Specifications, Dla Land And Maritime, Lockheed Martin Corporation, National Semiconductor Corporation, Advanced Micro Devices Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 14H4 | mmi amd | microcircuit memory | 50364 | RFQ |
| 48-066386-02 | northrop grumman systems corporation | microcircuit memory | 15280 | RFQ |
| 5962-3850303BRA | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3850303BRB | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3850303BRX | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-8103503BRB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8103503BRX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 7908688-05 | lockheed martin corporation | microcircuit memory | 90536 | RFQ |
| 81035 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 8103503RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| DMPAL14H4J | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| DMPAL14H4J 883 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| DMPAL14H4MJ 883B | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| M38510/50303BRA | military specifications | microcircuit memory | 81349 | RFQ |
| M38510/50303BRX | military specifications | microcircuit memory | 81349 | RFQ |
| MIL-M-38510/503 | military specifications | microcircuit memory | 81349 | RFQ |
| PAL14H4 | mmi amd | microcircuit memory | 50364 | RFQ |
| PAL14H4 | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| PAL14H4MJ | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| PAL14H4MJ | mmi amd | microcircuit memory | 50364 | RFQ |
| PAL14H4MJ 883B | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| PAL14H4MJ 883B | mmi amd | microcircuit memory | 50364 | RFQ |
| ROM-PROM HEAD 060 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQZP | INPUT CIRCUIT PATTERN | 28 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-184-1162, 5962011841162 | ||||
| 5930-01-558-3633 (5930015583633) | 5998-01-464-6151 (5998014646151) | 5935-01-506-9572 (5935015069572) | 5910-01-007-5962 (5910010075962) | |
| 5962-01-085-4176 (5962010854176) | 5905-01-416-9093 (5905014169093) | 5935-01-682-9240 (5935016829240) | 5950-00-193-8677 (5950001938677) | |
| 5950-01-127-8658 (5950011278658) | 5930-01-201-1993 (5930012011993) | 5998-00-153-4334 (5998001534334) | 5910-00-816-3875 (5910008163875) | |
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