If you are in search of part numbers like 115721-0001, 27C512-15MR J, 5962-87648, 5962-8764801BXA, 5962-8764801BXB, and others that fall under the NSN 5962-01-333-3430, we have you covered with the catalog and procurement resources provided on this page. At the top of the page, you will be able to review a number of details and data that pertain to this particular NSN, while available offerings are listed out below. If any items on our NSN 5962-01-333-3430 catalog interest you, be sure to request a quote from our staff at your earliest convenience. You can do this by submitting a Request for Quote (RFQ) form through our website or by getting in touch with our team via phone or email.
As an ASAP Semiconductor platform operating with quality as a focus, all NSN 5962-01-333-3430 parts we stock come from trusted manufacturers and undergo any necessary inspections or testing prior to shipment. Additionally, every purchase you make will come delivered with all applicable qualifying certifications or manufacturing trace documentation. Aside from such commitments, we also strive to provide customers procurement solutions that equally balance competitive pricing and timely fulfillment. With so much to offer, choose ASAP MilSTD for NSN 5962-01-333-3430 supplies and more.
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-333-3430 (013333430) |
| NCB Code | USA (01) |
| Manufacturer | Thales Defense And Security Inc, Microchip Technology Incorporated, Dla Land And Maritime, Northrop Grumman Systems Corporation, Advanced Micro Devices Inc, Truong Investment Llc, Atmel Corporation, Raytheon Company, Intel Corporation, Austin Semiconductor Inc, Waferscale Integration Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 115721-0001 | thales defense and security inc | microcircuit memory | 65597 | RFQ |
| 27C512-15MR J | microchip technology incorporated | microcircuit memory | 60991 | RFQ |
| 5962-87648 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8764801BXA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8764801BXB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8764801BXX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8764801XA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8764801XB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8764801XX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5A12318H03 | northrop grumman systems corporation | microcircuit memory | 2s209 | RFQ |
| AM27C512 150 BXA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AT27C512-15DC | truong investment llc | microcircuit memory | 92840 | RFQ |
| AT27C512R 15DM 883 | atmel corporation | microcircuit memory | 1fn41 | RFQ |
| AT27C512R-15DC | atmel corporation | microcircuit memory | 1fn41 | RFQ |
| G330510-303 | raytheon company | microcircuit memory | 49956 | RFQ |
| G528349-103 | raytheon company | microcircuit memory | 49956 | RFQ |
| MD27C512-15 B | intel corporation | microcircuit memory | 34649 | RFQ |
| SMJ27C512-25JM | austin semiconductor inc | microcircuit memory | 0eu86 | RFQ |
| WS27C512L-15DMB | waferscale integration inc | microcircuit memory | 66579 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| ABKW | OVERALL HEIGHT | 0.357 INCHES MINIMUM AND 0.432 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 350.0 MILLIWATTS |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES MAXIMUM SUPPLY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | EPROM |
| Relevant Components for NSN - 5962-01-333-3430, 5962013333430 | ||||
| 5930-01-558-3633 (5930015583633) | 5998-01-464-6151 (5998014646151) | 5935-01-506-9572 (5935015069572) | 5910-01-007-5962 (5910010075962) | |
| 5962-01-085-4176 (5962010854176) | 5905-01-416-9093 (5905014169093) | 5935-01-682-9240 (5935016829240) | 5950-00-193-8677 (5950001938677) | |
| 5950-01-127-8658 (5950011278658) | 5930-01-201-1993 (5930012011993) | 5998-00-153-4334 (5998001534334) | 5910-00-816-3875 (5910008163875) | |
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