Thank you for taking an interest in the various military and defense parts, aerospace parts, and other items that we offer. You have reached the RFQ page for part number 29671MW, a Fairchild Semiconductor Corp item with the NSN 5962012028612 that is listed alongside the description “Microcircuit Memory.” If you are interested in part number 29671MW and wish to learn more about your purchasing options, be sure to submit the form below at your earliest convenience while supplying us with important information concerning your needs and restrictions alike. Once we have a chance to receive and review your completed form, a member of our staff will reach out to you in 15 minutes or less to present a tailored solution for your comparisons.
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To ensure that shopping with us is as simple as possible, we make it easy to identify and procure exact items by listing parts alongside all applicable designations and information. For example, part number 29671MW is specifically listed with the NSN 5962-01-202-8612, and this code can be used to determine that it falls under FSC 5962 Microcircuits Electronic. Additionally, while tracing back to Fairchild Semiconductor Corp, this NSN part was specifically produced under CAGE Code 07933. With our services and dedication to simple procurement in mind, get started with us today!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-202-8612 Item Description: MICROCIRCUIT,MEMORY | 5962 | 012028612 | N | |||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
29671MW | 3 | 1 | 4 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 04 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDBIPOLAR AND BURN IN AND HERMETICALLY SEALED AND MONOLITHIC AND PARALLEL OPERATION AND POSITIVE OUTPUTS AND PROGRAMMABLE AND RELIABILITY SCREENING REQUIRED AND STATIC OPERATION AND WBUFFERED OUTPUT AND WENABLE AND WINDEPENDENT OUTPUTS AND |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY32768 |
MEMORY | CSWJ | WORD QUANTITY4096 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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