Thank you for taking an interest in the various military and defense parts, aerospace parts, and other items that we offer. You have reached the RFQ page for part number 5309-1N, a Harnischfeger Corp item with the NSN 5962013630915 that is listed alongside the description “Microcircuit Set.” If you are interested in part number 5309-1N and wish to learn more about your purchasing options, be sure to submit the form below at your earliest convenience while supplying us with important information concerning your needs and restrictions alike. Once we have a chance to receive and review your completed form, a member of our staff will reach out to you in 15 minutes or less to present a tailored solution for your comparisons.
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To ensure that shopping with us is as simple as possible, we make it easy to identify and procure exact items by listing parts alongside all applicable designations and information. For example, part number 5309-1N is specifically listed with the NSN 5962-01-363-0915, and this code can be used to determine that it falls under FSC 5962 Microcircuits Electronic. Additionally, while tracing back to Harnischfeger Corp, this NSN part was specifically produced under CAGE Code 56010. With our services and dedication to simple procurement in mind, get started with us today!
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8769001RA | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
| CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
| CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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