Thank you for taking an interest in the various military and defense parts, aerospace parts, and other items that we offer. You have reached the RFQ page for part number 2N6508G, a Littlefuse World Hq item with the NSN 5961012672280 that is listed alongside the description “Semiconductor Device Thyristor.” If you are interested in part number 2N6508G and wish to learn more about your purchasing options, be sure to submit the form below at your earliest convenience while supplying us with important information concerning your needs and restrictions alike. Once we have a chance to receive and review your completed form, a member of our staff will reach out to you in 15 minutes or less to present a tailored solution for your comparisons.
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To ensure that shopping with us is as simple as possible, we make it easy to identify and procure exact items by listing parts alongside all applicable designations and information. For example, part number 2N6508G is specifically listed with the NSN 5961-01-267-2280, and this code can be used to determine that it falls under FSC 5961 Semiconductor Devices and Associated Hardware. Additionally, while tracing back to Littlefuse World Hq, this NSN part was specifically produced under CAGE Code 5FWY4. With our services and dedication to simple procurement in mind, get started with us today!
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-267-2280 Item PartTypeName: SEMICONDUCTOR DEVICE,THYRISTOR | 5961 | 012672280 | 0 | N | A | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | A | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 2N6508 | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL AND PLASTIC |
| ABHP | OVERALL LENGTH | 16.51 MILLIMETERS MAXIMUM |
| ABJT | TERMINAL LENGTH | 14.73 MILLIMETERS MAXIMUM |
| ABKW | OVERALL HEIGHT | 4.82 MILLIMETERS MAXIMUM |
| ABMK | OVERALL WIDTH | 10.66 MILLIMETERS MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES MAXIMUM ON-STATE CURRENT,RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 129.0 DEG CELSIUS CASE |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
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