Thank you for taking an interest in the various military and defense parts, aerospace parts, and other items that we offer. You have reached the RFQ page for part number M38510/20702BEA, a Military Specifications item with the NSN 5962013314113 that is listed alongside the description “Microcircuit Memory.” If you are interested in part number M38510/20702BEA and wish to learn more about your purchasing options, be sure to submit the form below at your earliest convenience while supplying us with important information concerning your needs and restrictions alike. Once we have a chance to receive and review your completed form, a member of our staff will reach out to you in 15 minutes or less to present a tailored solution for your comparisons.
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To ensure that shopping with us is as simple as possible, we make it easy to identify and procure exact items by listing parts alongside all applicable designations and information. For example, part number M38510/20702BEA is specifically listed with the NSN 5962-01-331-4113, and this code can be used to determine that it falls under FSC 5962 Microcircuits Electronic. Additionally, while tracing back to Military Specifications, this NSN part was specifically produced under CAGE Code 81349. With our services and dedication to simple procurement in mind, get started with us today!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-331-4113 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013314113 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
G452137-13 | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
CBBL | FEATURES PROVIDED | BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND HIGH IMPEDANCE |
CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
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