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Request a Quote for IMS1600S-70M Sgs Thompson Microelectronics Inc Part With the NSN 5962-01-245-3441 Today

Part Number: IMS1600S-70M
Alternate P/N: IMS1600S70M
NIIN: 012453441
Item Name : Microcircuit Memory
CAGE Code: 60911
FSG: 59 Electrical and Electronic Equipment Components
Country: USA
NCB Code: 01

Thank you for taking an interest in the various military and defense parts, aerospace parts, and other items that we offer. You have reached the RFQ page for part number IMS1600S-70M, a Sgs Thompson Microelectronics Inc item with the NSN 5962012453441 that is listed alongside the description “Microcircuit Memory.” If you are interested in part number IMS1600S-70M and wish to learn more about your purchasing options, be sure to submit the form below at your earliest convenience while supplying us with important information concerning your needs and restrictions alike. Once we have a chance to receive and review your completed form, a member of our staff will reach out to you in 15 minutes or less to present a tailored solution for your comparisons.

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To ensure that shopping with us is as simple as possible, we make it easy to identify and procure exact items by listing parts alongside all applicable designations and information. For example, part number IMS1600S-70M is specifically listed with the NSN 5962-01-245-3441, and this code can be used to determine that it falls under FSC 5962 Microcircuits Electronic. Additionally, while tracing back to Sgs Thompson Microelectronics Inc, this NSN part was specifically produced under CAGE Code 60911. With our services and dedication to simple procurement in mind, get started with us today!

NSN Information for Part Number IMS1600S-70M with NSN 5962-01-245-3441, 5962012453441

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-245-3441

Item Description:

Microcircuit Memory

59620124534410NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
Ims1600s-70m 95

Characteristics Data of NSN 5962-01-245-3441, 5962012453441

MRCCriteriaCharacteristic
CZEQTime Rating Per Chacteristic70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMemory Device TypeRAM
AFJQStorage Temp Range-65.0/+150.0 DEG CELSIUS
CQZPInput Circuit Pattern19 INPUT
CBBLFeatures ProvidedELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HIGH RELIABILITY AND W/ENABLE
CQSJInclosure MaterialCERAMIC
ADATBody Width0.310 INCHES MAXIMUM
TTQYTerminal Type And Quantity22 PRINTED CIRCUIT
CWSGTerminal Surface TreatmentSOLDER
ADAQBody Length1.111 INCHES MAXIMUM
AEHXMaximum Power Dissipation Rating1.0 WATTS
ADAUBody Height0.180 INCHES MAXIMUM
TESTTest Data Document96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
MRCDecoded RequirementClear Text Reply
CQSZInclosure ConfigurationDUAL-IN-LINE
AFGAOperating Temp Range-55.0/+125.0 DEG CELSIUS
CQWXOutput Logic FormCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CZENVoltage Rating And Type Per Characteristic7.0 VOLTS MAXIMUM POWER SOURCE
CZZZMemory CapacityUNKNOWN

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